v rrm = 20 v - 40 v i f = 35 a features ? high surge capability do-4 package ? types from 20 v to 40 v v rrm ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol MBR3520(r) mbr3530(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v dc blocking voltage v dc 20 30 v conditions 40 28 40 35 MBR3520 thru mbr3540r mbr3540(r) 35 25 mbr3535(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode 2. reverse polarity (r): stud is anode. dc blocking voltage v dc 20 30 v continuous forward current i f 35 35 a operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol MBR3520(r) mbr3530(r) unit diode forward voltage 0.68 0.68 1.5 1.5 25 25 thermal characteristics thermal resistance, junction - case r thjc 1.5 1.5 c/w v -55 to 150 -55 to 150 t c = 25 c, t p = 8.3 ms 40 35 600 -55 to 150 mbr3540(r) 1.5 1.5 mbr3535(r) 1.5 v r = 20 v, t j = 125 c 1.5 0.68 0.68 25 ma 600 v r = 20 v, t j = 25 c i f = 35 a, t j = 25 c t c 110 c conditions 600 600 -55 to 150 35 35 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f 25 a www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
MBR3520 thru mbr3540r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MBR3520 thru mbr3540r do- 4 (do-203aa) j g f a e d p n b c m inches millimeters min max min max a 10-32 unf b 0.424 0.437 10.77 11.10 c ----- 0.505 ----- 12.82 d ------ 0.800 ----- 20.30 e 0.453 0.492 11.50 12.50 f 0.114 0.140 2.90 3.50 g ----- 0.405 ----- 10.29 j ----- 0.216 ----- 5.50 m ----- 0.302 ----- 7.68 n 0.031 0.045 0.80 1.15 p 0.070 0.79 1.80 2.00 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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